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51.
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52.
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53.
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Electrical properties of optimized nBn structures based on HgCdTe grown by molecular beam epitaxy I. I. Izhnin, A. V. Voytsekhovskiy, S. N. Nesmelov [et al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V. Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract bookMaterial type:  Article; Format:
electronic
available online
 ; Literary form:
Not fiction
; Audience:
Specialized;
Online access: Click here to access online Availability: No items available :
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54.
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Single element 2D materials and methods of their epitaxial synthesis I. I. Izhnin, A. V. Voytsekhovskiy, A. P. Kokhanenko [et al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Lozovoy, Kirill A | Dirko, Vladimir V | Vinarskiy, Vladimir P | Fitsych, Olena I. Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract bookMaterial type: Article; Format:
electronic
available online
; Literary form:
Not fiction
; Audience:
Specialized;
Online access: Click here to access online Availability: No items available :
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55.
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The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis V. Source: Technical physics lettersMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
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56.
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Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films A. V. Voytsekhovskiy, I. I. Izhnin, K. D. Mynbaev [et al.] by Voytsekhovskiy, Alexander V | Izhnin, Igor I | Mynbaev, Karim D | Morgiel, Jerzy | Świątek, Zbigniew | Korotaev, Alexander G | Fitsych, Olena I | Bonchyk, A. Yu | Savytskyy, Hrygory V | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V. Source: 7th International congress on energy fluxes and radiation effects (EFRE-2020 online), September 14–25, 2020, Tomsk, Russia : abstractsMaterial type: Article; Format:
electronic
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57.
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Admittance of barrier nanostructures based on MBE HgCdTe I. I. Izhnin, A. V. Voytsekhovskii, S. N. Nesmelov [et al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V. Source: Applied nanoscienceMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
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58.
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Single‑photon avalanche diode detectors based on group IV materials I. I. Izhnin, K. A. Lozovoy, A. P. Kokhanenko [et al.] by Izhnin, Igor I | Lozovoy, Kirill A | Kokhanenko, Andrey P | Khomyakova, Kristina I | Douhan, Rahaf M. H | Dirko, Vladimir V | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Akimenko, Nataliya Yu. Source: Applied nanoscienceMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
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59.
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Properties of arsenic-implanted Hg1-xCdxTe MBE films I. I. Izhnin, A. V. Voitsekhovskiі, A. G. Korotaev [et.al.] by Izhnin, Igor I | Korotaev, Alexander G | Fitsych, Olena I | Bonchyk, A. Yu | Savytskyy, Hrygory V | Mynbaev, Karim D | Varavin, Vasilii S | Dvoretsky, Sergei A | Yakushev, Maxim V | Voytsekhovskiy, Alexander V | Jakiela, Rafal | Trzyna, Malgorzata. Source: EPJ Web of ConferencesMaterial type: Article; Format:
electronic
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60.
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61.
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62.
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Light emission from CdHgTe–based nanostructures K. D. Mynbaev, A. V. Shilyaev, N. L. Bazhenov [et.al.] by Mynbaev, Karim D | Bazhenov, N. L | Izhnin, A. I | Izhnin, Igor I | Voytsekhovskiy, Alexander V | Mikhailov, Nikolay N | Varavin, Vasilii S | Dvoretsky, Sergei A | Shilyaev, A. V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Научное управление Лаборатории НУ. Source: Materials physics and mechanicsMaterial type: Article; Format:
electronic
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63.
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64.
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Comparison of background donor concentration in HgCdTe grown with different technologies A. Y. Bonchyk, I. A. Mohylyak, H. V. Savytskyy [et.al.] by Bonchyk, A. Yu | Savytskyy, Hrygory V | Fitsych, Olena I | Voytsekhovskiy, Alexander V | Izhnin, Igor I | Mohylyak, I. A. Source: XV International conference on physics and technology of thin films and nanosystems, Ivanо-Frankivsk, May, 11-16, 2015 : book of abstractsMaterial type: Article; Format:
electronic
available online
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Not fiction
; Audience:
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Online access: Click here to access online Availability: No items available :
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65.
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Capacitance-voltage characteristics of CdHgTe MIS structures with single quantum wells based on HgTe A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article; Format:
electronic
available online
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Not fiction
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Other title: Вольт-фарадные характеристики CdHgTe МДП-структур с одиночными квантовыми ямами на основе HgTe.Online access: Click here to access online Availability: No items available :
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66.
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67.
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Long-term stability of electron concentration in HgCdTe-based p-n junctions fabricated with ion etching I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovsky [et.al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory V | Mynbaev, Karim D | Fitsych, Olena I. Source: Infrared physics and technologyMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
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68.
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Admittance of MIS-structures based on HgCdTe with a double-layer CdTe/Al2O3 insulator S. M. Dzyadukh, A. V. Voitsekhovskii, S. N. Nesmelov [et al.] by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Sidorov, Georgiy Yu | Varavin, Vasilii S | Vasilev, Vladimir V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Dzyadukh, Stanislav M. Source: Russian physics journalMaterial type: Article; Format:
electronic
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69.
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70.
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Investigation of the effect of soft X-ray radiation on the electrophysical characteristics of epitaxial layers n-Hg1-xCdxTe A. V. Voytsekhovskiy, V. G. Sredin, O. B. Anan'in [et al.] by Sredin, Victor G | Ananin, Oleg B | Melekhov, Andrey P | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Yurchak, V. A | Voytsekhovskiy, Alexander V. Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstractsMaterial type: Article; Format:
electronic
available online
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71.
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Electrophysical characteristics of the pentacene-based MIS structures with a SiO2 insulator V. A. Novikov, A. V. Voytsekhovskiy, S. N. Nesmelov [et al.] by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Kopylova, Tatyana N | Degtyarenko, Konstantin M | Chernikov, Evgeniy V | Kalygina, Vera M | Novikov, Vadim A. Source: Russian physics journalMaterial type: Article; Format:
electronic
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72.
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73.
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74.
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Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films D. V. Grigoryev, A. V. Voytsekhovskiy, K. A. Lozovoy [et.al.] by Grigoryev, Denis V | Lozovoy, Kirill A | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Dvoretsky, Sergei A | Voytsekhovskiy, Alexander V. Source: Proceedings of SPIEMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
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75.
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Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing A. G. Korotaev, I. I. Izhnin, K. D. Mynbaev [et al.] by Izhnin, Igor I | Mynbaev, Karim D | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Korotaev, Alexander G | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory V | Świątek, Zbigniew | Morgiel, Jerzy. Source: Surface and coatings technologyMaterial type: Article; Format:
electronic
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76.
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77.
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Localization and nature of radiation donor defects in the arsenic implanted CdHgTe films grown by MBE I. I. Izhnin, O. I. Fitsych, A. V. Voitsekhovskii [et al.] by Fitsych, Olena I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Mynbaev, Karim D | Kurbanov, Kurban R | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Remesnik, V. G | Izhnin, Igor I | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory V | Świątek, Zbigniew | Morgiel, Jerzy. Source: Russian physics journalMaterial type: Article; Format:
electronic
available online
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78.
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Admittance of barrier nanostructures based on MBE HgCdTe I. I. Izhnin, A. V. Voytsekhovskiy, S. N. Nesmelov [et al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Kurbanov, Kurban R. Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract bookMaterial type: Article; Format:
electronic
available online
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Not fiction
; Audience:
Specialized;
Online access: Click here to access online Availability: No items available :
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79.
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TEM studies of structural defects in HgTe/HgCdTe quantum wells A. Yu. Bonchyk, H. V. Savytskyy, Z. Swiatek [et al.] by Bonchyk, A. Yu | Savytskyy, Hrygory V | Świątek, Zbigniew | Morgiel, Y | Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Mynbaev, Karim D | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V. Source: Applied nanoscienceMaterial type: Article; Format:
electronic
available online
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80.
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Unipolar barrier structures based on HgCdTe for infrared detection A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich | Kashirskii, Danila E | Lozovoy, Kirill A | Dirko, Vladimir V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu. Source: Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstractsMaterial type: Article; Format:
electronic
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81.
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82.
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83.
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Investigation of the differential resistance of MIS structures based on n-Hg0.78Cd0.22Te with near-surface graded-gap layers A. V. Voytsekhovskiy, N. A. Kulchitskii, S. N. Nesmelov [et al.] by Voytsekhovskiy, Alexander V | Kulchitskii, N. A | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu. Source: Journal of communications technology and electronicsMaterial type: Article; Format:
electronic
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84.
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85.
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86.
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Single-element 2D materials beyond graphene: methods of epitaxial synthesis K. A. Lozovoy, I. I. Izhnin, A. P. Kokhanenko [et al.] by Lozovoy, Kirill A | Izhnin, Igor I | Kokhanenko, Andrey P | Dirko, Vladimir V | Vinarskiy, Vladimir P | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Akimenko, Nataliya Yu. Source: NanomaterialsMaterial type: Article; Format:
electronic
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87.
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88.
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89.
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Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs I. I. Izhnin, A. I. Izhnin, K. D. Mynbaev [et.al.] by Izhnin, A. I | Mynbaev, Karim D | Bazhenov, N. L | Shilyaev, A. V | Mikhailov, Nikolay N | Varavin, Vasilii S | Dvoretsky, Sergei A | Fitsych, Olena I | Voytsekhovskiy, Alexander V | Izhnin, Igor I | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники. Source: Opto-electronics reviewMaterial type: Article; Format:
electronic
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90.
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Influence of composition of Hg1-xCdxTe(x = 0.22-0.57) epitaxial film on dynamics of accumulation and spatial distribution of electrically active radiation defects after boron implantation A. V. Voytsekhovskiy, D. V. Grigoryev, A. G. Korotaev [et al.] by Grigoryev, Denis V | Korotaev, Alexander G | Kokhanenko, Andrey P | Lozovoy, Kirill A | Izhnin, Igor I | Savytskyy, Hrygory V | Bonchyk, A. Yu | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Voytsekhovskiy, Alexander V | Varavin, Vasilii S | Yakushev, Maxim V. Source: Materials research expressMaterial type: Article; Format:
electronic
available online
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91.
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Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovsky [et al.] by Mynbaev, Karim D | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Syvorotka, I. I | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Remesnik, V. G | Yakushev, Maxim V | Świątek, Zbigniew | Morgiel, Jerzy | Bonchyk, A. Yu | Savytskyy, Hrygory V | Izhnin, Igor I. Source: Infrared physics and technologyMaterial type: Article; Format:
electronic
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92.
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93.
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94.
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Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu | Voytsekhovskiy, Alexander V. Source: VacuumMaterial type: Article; Format:
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95.
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96.
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The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air A. G. Korotaev, D. V. Grigoryev, A. V. Voitsekhovskii [et al.] by Grigoryev, Denis V | Voytsekhovskiy, Alexander V | Lozovoy, Kirill A | Tarasenko, Viktor Fedotovich | Ripenko, Vasilii S | Shulepov, Mikhail A | Erofeev, Mikhail V | Yakushev, Maxim V | Dvoretsky, Sergei A | Korotaev, Alexander G | Mikhailov, Nikolay N | Varavin, Vasilii S. Source: Surface and coatings technologyMaterial type: Article; Format:
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97.
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98.
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99.
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Influence of a high-frequency pulsed nanosecond diffusion discharge in the nitrogen atmosphere on the electrical characteristics of a CdHgTe epitaxial films D. V. Grigoryev, A. V. Voytsekhovskii, A. G. Korotaev [et al.] by Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Lyapunov, D. V | Lozovoy, Kirill A | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Erofeev, Mikhail V | Ripenko, Vasilii S | Dvoretsky, Sergei A | Grigoryev, Denis V | Mikhailov, Nikolay N. Source: Journal of Physics: Conference SeriesMaterial type: Article; Format:
electronic
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100.
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Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Vasilev, Vladimir V | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu | Nesmelov, Sergey N. Source: Physica status solidi CMaterial type: Article; Format:
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