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The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

Contributor(s): Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis VMaterial type: ArticleArticleContent type: Текст Media type: электронный Subject(s): молекулярно-лучевая эпитаксия | ионная имплантация | МДП-структуры | адмиттансGenre/Form: статьи в журналах Online resources: Click here to access online In: Technical physics letters Vol. 47, № 2. P. 189-192
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