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Luminescence studies of HgCdTe‑ and InAsSb‑based quantum‑well structures I. I. Izhnin, A. I. Izhnin, O. I. Fitsych [et al.] by Izhnin, A. I | Fitsych, Olena I | Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Semakova, A. A | Bazhenov, N. L | Mynbaev, Karim D | Zegrya, G. G | Izhnin, Igor I. Source: Applied nanoscienceMaterial type: Article; Format:
electronic
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Direct comparison of the results of arsenic ion implantation in n– and p–type Hg0.8Cd0.2Te I. I. Izhnin, K. D. Mynbaev, Z. Swiatek [et al.] by Mynbaev, Karim D | Świątek, Zbigniew | Morgiel, Jerzy | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Varavin, Vasilii S | Dvoretsky, Sergei A | Marin, Denis V | Yakushev, Maxim V | Izhnin, Igor I | Fitsych, Olena I | Bonchyk, A. Yu | Savytskyy, Hrygory V. Source: Infrared physics and technologyMaterial type: Article; Format:
electronic
available online
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Nano‑size defect layers in arsenic‑implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy O. Yu. Bonchyk, H. V. Savytskyy, I. I. Izhnin [et al.] by Izhnin, Igor I | Mynbaev, Karim D | Syvorotka, I. I | Korotaev, Alexander G | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Varavin, Vasilii S | Marin, Denis V | Bonchyk, A. Yu | Mikhailov, Nikolay N | Yakushev, Maxim V | Świątek, Zbigniew | Morgiel, Jerzy | Jakiela, Rafal | Savytskyy, Hrygory V. Source: Applied nanoscienceMaterial type: Article; Format:
electronic
available online
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Calculation of parameters of detectors of terahertz range based on the system immersion lens-planar antenna-semiconductor sensing unit A. V. Barko, A. V. Voitsekhovskii, A. G. Levashkin, A. P. Kokhanenko by Barko, A. V | Levashkin, A. G | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V. Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, RussiaMaterial type: Article; Format:
electronic
available online
; Literary form:
Not fiction
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Specialized;
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Optical and electrical studies of arsenic-implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates I. I. Izhnin, A. V. Voytsekhovsky, A. G. Korotaev [et.al.] by Izhnin, Igor I | Korotaev, Alexander G | Fitsych, Olena I | Bonchyk, A. Yu | Savytskyy, Hrygory V | Mynbaev, Karim D | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Voytsekhovskiy, Alexander V | Yakushev, Maxim V | Jakiela, Rafal. Source: Infrared physics and technologyMaterial type: Article; Format:
electronic
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Changes in the electro-physical propertyies of MCT epitaxial films affected by a plasma volume discharge induced by an avalache beam in atmospheric-pressure air D. V. Grigoryev, A. V. Voytsekhovskii, K. A. Lozovoy [et.al.] by Grigoryev, Denis V | Lozovoy, Kirill A | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ. Source: 12th International Conference "Gas Discharge Plasmas and Their Applications" GDP 2015, September 6-11, 2015, Tomsk, Russia : AbstractsMaterial type: Article; Format:
electronic
available online
; Literary form:
Not fiction
; Audience:
Specialized;
Online access: Click here to access online Availability: No items available :
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Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic I. I. Izhnin, S. A. Dvoretsky, K. D. Mynbaev [et.al.] by Dvoretsky, Sergei A | Mynbaev, Karim D | Fitsych, Olena I | Mikhailov, Nikolay N | Varavin, Vasilii S | Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V | Sheregii, E | Izhnin, Igor I | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники. Source: Journal of applied physicsMaterial type: Article; Format:
electronic
available online
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Specialized;
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Electrical properties of the V-defects of epitaxial HgCdTe V. A. Novikov, D. V. Grigoryev, D. A. Bezrodnyy [et.al.] by Novikov, Vadim A | Bezrodnyy, Dmitriy A | Voytsekhovskiy, Alexander V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Grigoryev, Denis V. Source: 17th International Conference on II-VI Compounds and Related Materials, Paris, 13-18 September 2015 : conference bookMaterial type: Article; Format:
electronic
available online
; Literary form:
Not fiction
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Specialized;
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Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal–insulator–semiconductor techniques A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis V. Source: Journal of electronic materialsMaterial type: Article; Format:
electronic
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Background donor concentration in HgCdTe M. Pociask-Bialy, I. I. Izhnin, A. V. Voytsekhovskiy [et.al.] by Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Fitsych, Olena I | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Mynbaev, Karim D | Izhnin, Igor I | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Научное управление Лаборатории НУ. Source: Opto-electronics reviewMaterial type: Article; Format:
electronic
available online
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Background donor concentration in HgCdTe I. I. Izhnin, K. D. Mynbaev, A. V. Voytsekhovskiy [et.al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Fitsych, Olena I | Pociask-Bialy, Malgorzata | Dvoretsky, Sergei A | Mynbaev, Karim D | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники. Source: Opto-electronics reviewMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
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Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films A. V. Voytsekhovskiy, I. I. Izhnin, I. I. Syvorotka [et al.] by Izhnin, Igor I | Syvorotka, I. I | Korotaev, Alexander G | Mynbaev, Karim D | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Remesnik, V. G | Yakushev, Maxim V | Voytsekhovskiy, Alexander V. Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstractsMaterial type: Article; Format:
electronic
available online
; Literary form:
Not fiction
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Specialized;
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Ge/Si elongated quantum dots formation modelling with respect to the energy of edges A. P. Kokhanenko, K. A. Lozovoy, A. V. Voitsekhovskii by Kokhanenko, Andrey P | Lozovoy, Kirill A | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Научные подразделения РФФ | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article; Format:
electronic
available online
; Literary form:
Not fiction
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Specialized;
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Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods A. A. Pishchagin, K. A. Lozovoy, V. Y. Serokhvostov [et.al.] by Pishchagin, Anton A | Serokhvostov, V. Yu | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Nikiforov, Alexander I | Lozovoy, Kirill A. Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, RussiaMaterial type: Article; Format:
electronic
available online
; Literary form:
Not fiction
; Audience:
Specialized;
Online access: Click here to access online Availability: No items available :
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Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition D. V. Lyapunov, A. A. Pishchagin, D. V. Grigoryev [et.al.] by Lyapunov, D. V | Grigoryev, Denis V | Korotaev, Alexander G | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Iznin, I. I | Savytskyy, Hrygory V | Bonchyk, A. Yu | Dvoretsky, Sergei A | Pishchagin, Anton A | Mikhailov, Nikolay N. Source: Journal of Physics: Conference SeriesMaterial type: Article; Format:
electronic
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Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis I. I. Izhnin, I. I. Syvorotka, O. I. Fitsych [et al.] by Syvorotka, I. I | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Marin, Denis V | Mikhailov, Nikolay N | Remesnik, V. G | Yakushev, Maxim V | Mynbaev, Karim D | Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G. Source: Semiconductor science and technologyMaterial type: Article; Format:
electronic
available online
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Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride I. Izhnin, O. I. Fitsych, Z. Świątek [et al.] by Fitsych, Olena I | Świątek, Zbigniew | Morgiel, Jerzy | Bonchyk, A. Yu | Savytskyy, Hrygory V | Mynbaev, Karim D | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Yakushev, Maxim V | Marin, Denis V | Varavin, Vasilii S | Dvoretsky, Sergei A | Izhnin, Igor I. Source: Opto-electronics reviewMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
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