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Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1–xCdxTe in wide temperature range A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh
Material type: ArticleSubject(s): теллурид кадмия-ртути | МДП-структуры | адмиттанс | варизонные слоиGenre/Form: статьи в журналах Online resources: Click here to access online In: Opto-electronics review Vol. 22, № 4. P. 236-244No physical items for this record
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