On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level V. M. Boiko, V. N. Brudnii, V. S. Ermakov [et al.]
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ArticleSubject(s): электронные свойства | кристаллы | Ферми уровень | отжиг радиационных дефектовGenre/Form: статьи в журналах Online resources: Click here to access online
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Semiconductors Vol. 49, № 6. P. 763-766Abstract: The electronic properties and the limiting position of the Fermi level in p-GaSb crystals irradiated with full-spectrum reactor neutrons at up to a fluence of 8.6 × 1018 cm−2 are studied. It is shown that the irradiation of GaSb with reactor neutrons results in an increase in the concentration of free holes to p lim = (5−6) × 1018 cm−3 and in pinning of the Fermi level at the limiting position F lim close to E V + 0.02 eV at 300 K. The effect of the annealing of radiation defects in the temperature range 100–550°C is explored.
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The electronic properties and the limiting position of the Fermi level in p-GaSb crystals irradiated with full-spectrum reactor neutrons at up to a fluence of 8.6 × 1018 cm−2 are studied. It is shown that the irradiation of GaSb with reactor neutrons results in an increase in the concentration of free holes to p lim = (5−6) × 1018 cm−3 and in pinning of the Fermi level at the limiting position F lim close to E V + 0.02 eV at 300 K. The effect of the annealing of radiation defects in the temperature range 100–550°C is explored.
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