000			02339nab a2200337 c 4500
001			koha000894746
005			20220527160923.0
007			cr |
008			220524|2021 enk s a eng d
024	7		_a10.1039/d0cp05234e _2doi
035			_akoha000894746
040			_aRU-ToGU _brus _cRU-ToGU
245	1	0	_aElectron–phonon interaction in In-induced √7 ×√3 structures on Si(111) from first-principles _cI. Yu. Sklyadneva, R. Heid, P. M. Echenique, E. V. Chulkov
336			_aТекст
337			_aэлектронный
504			_aБиблиогр.: 45 назв.
520	3		_aElectron-phonon interaction in the Si(111)-supported rectangular phases of In is investigated within the density-functional theory and linear-response. For both single-layer and double-layer structures, it is found that the phonon-induced scattering of electrons is almost exclusively determined by vibrations of In atoms. It is shown that the strength of electron-phonon coupling at the Fermi level lambda(E-F) increases almost twofold upon adding the second In layer. One of the reasons is that additional low-frequency modes appear in the phonon spectrum, which favors a strong enhancement of lambda(E-F). The agreement of the calculated parameter lambda(E-F) = 0.99 for a double-layer structure as well as the superconducting transition temperature T-c = 3.5 K with experimental estimates indicates that the discovered superconducting phase is probably a double-layer rectangular -In structure on Si(111) with a coverage of 2.4 ML. This conclusion is also supported by good agreement between the calculated electron band structure and ARPES measurements.
653			_aэлектрон-фононное взаимодействие
653			_aоднослойные структуры
653			_aдвухслойные структуры
655		4	_aстатьи в журналах _9805199
700	1		_aSklyadneva, Irina Yu. _9117782
700	1		_aHeid, Rolf _9117778
700	1		_aEchenique, Pedro Miguel _9117781
700	1		_aChulkov, Evgueni V. _989119
773	0		_tPhysical chemistry chemical physics _d2021 _gVol. 23, № 13. P. 7955-7960 _x1463-9076
852	4		_aRU-ToGU
856	4		_uhttp://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000894746
908			_aстатья
999			_c894746