| 000 | 01944nab a2200325 c 4500 | ||
|---|---|---|---|
| 001 | koha000722049 | ||
| 005 | 20221025132728.0 | ||
| 007 | cr | | ||
| 008 | 211123|2018 xxu s a eng d | ||
| 024 | 7 |
_a10.1063/1.5037412 _2doi |
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| 035 | _akoha000722049 | ||
| 040 |
_aRU-ToGU _brus _cRU-ToGU |
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| 100 | 1 |
_aHerklotz, Frank _9816135 |
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| 245 | 1 | 0 |
_aOn the method of photoconductive detection of defects in semiconductors by vibrational mode-related Fano resonances _cF. Herklotz, I. Chaplygin, E. V. Lavrov |
| 336 | _aТекст | ||
| 337 | _aэлектронный | ||
| 504 | _aБиблиогр.: 24 назв. | ||
| 520 | 3 | _aThe method of photoconductive detection of defect-related vibrational modes in semiconductors by Fano resonances is validated by a combined photoconductivity and infrared absorption study of the interstitial hydrogen donor in ZnO. Depth-resolved isotopic substitution experiments with varying concentrations of H and D show that the effect of vibrational mode-related absorption has to be taken into account in order to allow for an unambiguous interpretation of the experimental data. A quantitative model is presented which describes the influence of sample thickness, defect concentration, and the presence of other donors on the sign, magnitude, and shape of the Fano resonances. Implications for the photoconductive detection of defect-related vibrational modes are discussed | |
| 653 | _aполупроводники | ||
| 653 | _aФано резонанс | ||
| 653 | _aколебательные моды | ||
| 655 | 4 |
_aстатьи в журналах _9763949 |
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| 700 | 1 |
_aChaplygin, I. _9681033 |
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| 700 | 1 |
_aLavrov, E. V. _9681036 |
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| 773 | 0 |
_tJournal of applied physics _d2018 _gVol. 124, № 2. P. 025704-1-025704-8 _x0021-8979 |
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| 852 | 4 | _aRU-ToGU | |
| 856 | 4 | _uhttp://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000722049 | |
| 908 | _aстатья | ||
| 999 | _c722049 | ||