| 000 | 02227nab a2200385 c 4500 | ||
|---|---|---|---|
| 001 | vtls000789473 | ||
| 003 | RU-ToGU | ||
| 005 | 20210922110049.0 | ||
| 007 | cr | | ||
| 008 | 201202|2018 ne s a eng dd | ||
| 024 | 7 |
_a10.1016/j.physb.2018.01.039 _2doi |
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| 035 | _ato000789473 | ||
| 040 |
_aRU-ToGU _brus _cRU-ToGU |
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| 245 | 1 | 0 |
_aElectronic structure of graphene- and BN-supported phosphorene _cA. R. Davletshin, S. V. Ustiuzhanina, A. A. Kistanov [et al.] |
| 336 | _aТекст | ||
| 337 | _aэлектронный | ||
| 520 | 3 | _aBy using first–principles calculations, the effects of graphene and boron nitride (BN) substrates on the electronic properties of phosphorene are studied. Graphene–supported phosphorene is found to be metallic, while the BN–supported phosphorene is a semiconductor with a moderate band gap of 1.02 eV. Furthermore, the effects of the van der Waals interactions between the phosphorene and graphene or BN layers by means of the interlayer distance change are investigated. It is shown that the interlayer distance change leads to significant band gap size modulations and direct-indirect band gap transitions in the phosphorene–BN heterostructure. The presented band gap engineering of phosphorene may be a powerful technique for the fabrication of high–performance phosphorene–based nanodevices. | |
| 653 | _aфосфорен | ||
| 653 | _aграфен | ||
| 653 | _aгетероструктура | ||
| 653 | _aширина запрещенной зоны | ||
| 655 | 4 |
_aстатьи в журналах _9745982 |
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| 700 | 1 |
_aUstiuzhanina, Svetlana V. _9506340 |
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| 700 | 1 |
_aKistanov, Andrey A. _9423629 |
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| 700 | 1 |
_aSaadatmand, Danial _9478692 |
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| 700 | 1 |
_aDmitriev, Sergey V. _9102247 |
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| 700 | 1 |
_aZhou, Kun _9420805 |
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| 700 | 1 |
_aKorznikova, Elena A. _9106046 |
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| 700 | 1 |
_aDavletshin, Artur R. _9506339 |
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| 773 | 0 |
_tPhysica B: Condensed matter _d2018 _gVol. 534. P. 63-67 _x0921-4526 |
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| 852 | 4 | _aRU-ToGU | |
| 856 | 4 | _uhttp://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000789473 | |
| 908 | _aстатья | ||
| 999 | _c473988 | ||