000 02435nab a2200397 c 4500
001 vtls000674593
003 RU-ToGU
005 20221222135046.0
007 cr |
008 200131|2019 xxu s a eng d
024 7 _a10.1103/PhysRevLett.122.107202
_2doi
035 _ato000674593
040 _aRU-ToGU
_brus
_cRU-ToGU
245 1 0 _aUnique thickness-dependent properties of the van der Waals interlayer antiferromagnet MnBi2Te4 films
_cM. M. Otrokov, I. P. Rusinov, M. Blanco-Rey [et al.]
504 _aБиблиогр.: 65 назв.
520 3 _aUsing density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering MnBi2Te4 as a model material, we find it to demonstrate a remarkable set of thickness-dependent magnetic and topological transitions. While a single septuple layer block of MnBi2Te4 is a topologically trivial ferromagnet, the thicker films made of an odd (even) number of blocks are uncompensated (compensated) interlayer antiferromagnets, which show wide band gap quantum anomalous Hall (zero plateau quantum anomalous Hall) states. Thus, MnBi2Te4 is the first stoichiometric material predicted to realize the zero plateau quantum anomalous Hall state intrinsically. This state has been theoretically shown to host the exotic axion insulator phase.
653 _aантиферромагнетики
653 _aмагнитные свойства
653 _aэлектронные свойства
655 4 _aстатьи в журналах
_9745982
700 1 _aRusinov, Igor P.
_9220490
700 1 _aBlanco-Rey, Maria
_9500722
700 1 _aHoffmann, M.
_9417720
700 1 _aVyazovskaya, Alexandra Yu.
_9500723
700 1 _aEremeev, Sergey V.
_989116
700 1 _aErnst, Arthur
_9148312
700 1 _aEchenique, Pedro Miguel
_9117781
700 1 _aArnau, Andrés
_9438707
700 1 _aChulkov, Evgueni V.
_989119
700 1 _aOtrokov, Mikhail M.
_999558
773 0 _tPhysical Review Letters
_d2019
_gVol. 122, № 10. P. 107202-1-107202-6
_x0031-9007
852 4 _aRU-ToGU
856 4 _uhttp://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000674593
908 _aстатья
999 _c463629