| 000 | 01845nab a2200337 c 4500 | ||
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| 001 | vtls000645654 | ||
| 003 | RU-ToGU | ||
| 005 | 20211124162542.0 | ||
| 007 | cr | | ||
| 008 | 181213|2015 gw s a eng d | ||
| 035 | _ato000645654 | ||
| 040 |
_aRU-ToGU _brus _cRU-ToGU |
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| 245 | 1 | 0 |
_aOn the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level _cV. M. Boiko, V. N. Brudnii, V. S. Ermakov [et al.] |
| 504 | _aБиблиогр.: 13 назв. | ||
| 520 | 3 | _aThe electronic properties and the limiting position of the Fermi level in p-GaSb crystals irradiated with full-spectrum reactor neutrons at up to a fluence of 8.6 × 1018 cm−2 are studied. It is shown that the irradiation of GaSb with reactor neutrons results in an increase in the concentration of free holes to p lim = (5−6) × 1018 cm−3 and in pinning of the Fermi level at the limiting position F lim close to E V + 0.02 eV at 300 K. The effect of the annealing of radiation defects in the temperature range 100–550°C is explored. | |
| 653 | _aэлектронные свойства | ||
| 653 | _aкристаллы | ||
| 653 | _aФерми уровень | ||
| 653 | _aотжиг радиационных дефектов | ||
| 655 | 4 |
_aстатьи в журналах _9745982 |
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| 700 | 1 |
_aBrudnyi, Valentin N. _9104916 |
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| 700 | 1 |
_aErmakov, V. S. _9487196 |
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| 700 | 1 |
_aKolin, Nikolay G. _9487193 |
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| 700 | 1 |
_aKorulin, A. V. _9487194 |
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| 700 | 1 |
_aBoiko, V. M. _9567641 |
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| 773 | 0 |
_tSemiconductors _d2015 _gVol. 49, № 6. P. 763-766 _x1063-7826 |
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| 852 | 4 | _aRU-ToGU | |
| 856 | 7 | _uhttp://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000645654 | |
| 908 | _aстатья | ||
| 999 | _c443487 | ||