000			02231nab a2200325 c 4500
001			vtls000577713
003			RU-ToGU
005			20210907031639.0
007			cr |
008			170619|2015 xxu s a eng dd
024	7		_a10.1166/jno.2015.1714 _2doi
035			_ato000577713
040			_aRU-ToGU _brus _cRU-ToGU
245	1	0	_aFormation of Ge/Si nanoscale structures at different growth conditions by molecular beam epitaxy _cV. A. Timofeev, A. I. Nikiforov, V. A. Zinovyev [et.al.]
504			_aБиблиогр.: 11 назв.
520	3		_aNanoscale structures such as quantum wells, quantum wires, quantum dots and quantum fortresses are obtained by molecular beam epitaxy (MBE) technique. Various surface morphology was controlled by changing of growth parameters. Formation of Ge quantum dots in hut-island form is observed during deposition of Ge on Si film or GeSi solid solution layer in temperature range between 300 and 500 °C. Density of Ge islands without use of surfactant reaches 3.5 · 1011 cm–2 at lateral size of 12 nm. Lowering growth temperature up to 300 °C emergence of quantum fortress array takes place at deposition of Ge on GeSi solid solution layer. By depositing a Ge wetting layer at thickness of 3–5 monolayers and subsequent continuous annealing we have obtained nano-structures in form of wires. The results of these studies are of great applied value in the field of infrared photodetectors and single-hole transistors.
653			_aнаноразмерные структуры
653			_aмолекулярно-лучевая эпитаксия
655		4	_aстатьи в журналах _9681159
700	1		_aTimofeev, V. A. _9357106
700	1		_aZinovyev, V. A. _9474995
700	1		_aTeys, S. A. _9474996
700	1		_aPchelyakov, Oleg P. _9417760
700	1		_aNikiforov, Alexander I. _995710
773	0		_tJournal of nanoelectronics and optoelectronics _d2015 _gVol. 10, № 1. P. 99-103 _x1555-130X
852	4		_aRU-ToGU
856	7		_uhttp://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000577713
908			_aстатья
999			_c422052