000			02317nab a2200361 c 4500
001			vtls000553218
003			RU-ToGU
005			20210907030211.0
007			cr |
008			181202|2016 enk s a eng d
024	7		_a10.1038/srep24137 _2doi
035			_ato000553218
040			_aRU-ToGU _brus _cRU-ToGU
245	1	0	_aPressure-induced topological phases of KNa2Bi _cI. Y. Sklyadneva, I. P. Rusinov, R. Heid [et.al.]
504			_aБиблиогр.: 34 назв.
520	3		_aWe report an ab initio study of the effect of hydrostatic pressure and uniaxial strain on electronic properties of KNa2Bi, a cubic bialkali bismuthide. It is found that this zero-gap semimetal with an inverted band structure at the Brillouin zone center can be driven into various topological phases under proper external pressure. We show that upon hydrostatic compression KNa2Bi turns into a trivial semiconductor with a conical Dirac-type dispersion of electronic bands at the point of the topological transition while the breaking of cubic symmetry by applying a uniaxial strain converts the compound into a topological insulator or into a three-dimensional Dirac semimetal with nontrivial surface Fermi arcs depending on the sign of strain. The calculated phonon dispersions show that KNa2Bi is dynamically stable both in the cubic structure (at any considered pressures) and in the tetragonal phase (under uniaxial strain).
653			_aполупроводники
653			_aполуметаллы
653			_aгидростатическое давление
653			_aэлектронные свойства
655		4	_aстатьи в журналах _9681159
700	1		_aSklyadneva, Irina Yu. _9117782
700	1		_aHeid, Rolf _9117778
700	1		_aBohnen, Klaus-Peter _989596
700	1		_aEchenique, Pedro Miguel _9117781
700	1		_aChulkov, Evgueni V. _989119
700	1		_aRusinov, Igor P. _9220490
773	0		_tScientific Reports [Еlectronic resource] _d2016 _gVol. 6. P. 24137 (1-6) _x2045-2322
852	4		_aRU-ToGU
856	7		_uhttp://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000553218
908			_aстатья
999			_c409317