| 000 | 02050nab a2200313 c 4500 | ||
|---|---|---|---|
| 001 | vtls000581434 | ||
| 003 | RU-ToGU | ||
| 005 | 20210907025944.0 | ||
| 007 | cr | | ||
| 008 | 170905|2015 ne s a eng d | ||
| 024 | 7 |
_a10.1016/j.jcrysgro.2015.07.005 _2doi |
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| 035 | _ato000581434 | ||
| 040 |
_aRU-ToGU _brus _cRU-ToGU |
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| 100 | 1 |
_aFilimonov, Sergey N. _989121 |
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| 245 | 1 | 0 |
_aModel of step propagation and step bunching at the sidewalls of nanowires _cS. N. Filimonov, Y. Y. Hervieu |
| 504 | _aБиблиогр.: 35 назв. | ||
| 520 | 3 | _aRadial growth of vertically aligned nanowires involves formation and propagation of monoatomic steps at atomically smooth nanowire sidewalls. Here we study the step dynamics with a step flow model taking into account the presence of a strong sink for adatoms at top of the nanowire and adatom exchange between the nanowire sidewall and surrounding substrate surface. Analytical expressions for velocities of steps propagating from the nanowire base to the nanowire top are obtained. It is shown that the step approaching the nanowire top will slow down if the top nanowire facet is a stronger sink for adatoms than the sidewall step. This might trigger bunching of the steps at the sidewall resulting in development of the pencil-like shape of nanowires such as observed in, e.g., the Au-assisted MBE growth of InAs. | |
| 653 | _aнаноструктуры | ||
| 653 | _aповерхностные процессы | ||
| 653 | _aмолекулярно-лучевая эпитаксия | ||
| 653 | _aмодели роста | ||
| 655 | 4 |
_aстатьи в журналах _9681159 |
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| 700 | 1 |
_aHervieu, Yurij Yurevich _993226 |
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| 773 | 0 |
_tJournal of crystal growth _d2015 _gVol. 427. P. 60-66 _x0022-0248 |
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| 852 | 4 | _aRU-ToGU | |
| 856 | 7 | _uhttp://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000581434 | |
| 908 | _aстатья | ||
| 999 | _c406801 | ||