Effect of oxygen on the electrical conductivity of Pt-contacted α-Ga2O2/ε(κ)-Ga2O3 MSM structures on patterned sapphire substrates N. N. Yakovlev, V. I. Nikolaev, S. I. Stepanov [et al.]
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ArticleContent type: Текст Media type: электронный Subject(s): хемосорбция | электропроводность | кислородGenre/Form: статьи в журналах Online resources: Click here to access online
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IEEE sensors journal Vol. 21, № 13. P. 14636-14644Abstract: Electrical conductivity and gas sensitivity of α-Ga2O2/ ε(κ)-Ga2O3 structures were measured for oxygen concentrations ranging from 2 % to 100 % and temperatures ranging from 25 °C to 220 °C. It was found that the oxygen sensitivity of the structures depended on the donor dopant concentration. The alpha -Ga _{2}O_{3}/arepsilon ( kappa )-Ga 2 O 3 structures doped with sim 1.5 imes 10^{17} cm −3 of Sn showed high sensitivity to O 2 in the temperature range from 180 °C to 220 °C and at the bias voltage below 7.5 V. This effect can be attributed to the chemisorption of oxygen molecules on the surface of structures, which reduces energy barriers between ε(κ)-Ga2O3 grains.
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Electrical conductivity and gas sensitivity of α-Ga2O2/ ε(κ)-Ga2O3 structures were measured for oxygen concentrations ranging from 2 % to 100 % and temperatures ranging from 25 °C to 220 °C. It was found that the oxygen sensitivity of the structures depended on the donor dopant concentration. The alpha -Ga _{2}O_{3}/arepsilon ( kappa )-Ga 2 O 3 structures doped with sim 1.5 imes 10^{17} cm −3 of Sn showed high sensitivity to O 2 in the temperature range from 180 °C to 220 °C and at the bias voltage below 7.5 V. This effect can be attributed to the chemisorption of oxygen molecules on the surface of structures, which reduces energy barriers between ε(κ)-Ga2O3 grains.
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