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	1.	No cover image available Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers A. Polyakov, V. I. Nikolaev, S. I. Stepanov [et al.] by Polyakov, Alexander \| Nikolaev, Vladimir I \| Stepanov, Sergey I \| Almaev, Aleksei V \| Pechnikov, Aleksei I \| Yakimov, Eugene \| Kushnarev, Bogdan O \| Shchemerov, Ivan \| Scheglov, Mikhail P \| Chernykh, Alexey \| Vasilev, Anton \| Kochkova, Anastasia \| Pearton, Stephen J. Source: Journal of applied physicsMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	2.	No cover image available Effects of sapphire substrate orientation on Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy using α-Cr2O3 buffers A. Polyakov, V. I. Nikolaev, S. I. Stepanov [et al.] by Nikolaev, Vladimir I \| Polyakov, Alexander \| Stepanov, Sergey I \| Almaev, Aleksei V \| Pechnikov, Aleksei I \| Yakimov, Eugene \| Kushnarev, Bogdan O \| Shchemerov, Ivan \| Scheglov, Mikhail P \| Chernykh, Alexey \| Vasilev, Anton \| Kochkova, Anastasia \| Guzilova, Lyubov I \| Pearton, Stephen J. Source: Journal of physics D: Applied physicsMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)

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