TY  - SER
AU  - Stepanov,Sergey I.
AU  - Nikolaev,Vladimir I.
AU  - Almaev,Aleksei V.
AU  - Pechnikov,Aleksei I.
AU  - Scheglov,Mikhail P.
AU  - Chikiryaka,Andrei V.
AU  - Kushnarev,Bogdan O.
AU  - Polyakov,A.Y.
TI  - HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer
KW  - пленки оксида галлия
KW  - сапфировые подложки
KW  - метод высокочастотного магнетронного распыления
KW  - статьи в журналах
N1  - Библиогр.: 17 назв
N2  - Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without α-Cr2O3 buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of α-Ga2O3 and ε-Ga2O3 phases with a dislocation density of about 2∙1010 cm-2. The insertion of α-Cr2O3 buffer layers resulted in phase-pure α-Ga2O3 films and a fourfold reduction of the dislocation density to 5∙109 cm-2
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000894602
ER  -