TY  - BOOK
AU  - Srivastava,Viranjay M.
AU  - Singh,Ghanshyam
ED  - SpringerLink (Online service)
TI  - MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
T2  - Analog Circuits and Signal Processing,
SN  - 9783319011653
AV  - TK7888.4 
U1  - 621.3815 23
PY  - 2014///
CY  - Cham
PB  - Springer International Publishing, Imprint: Springer
KW  - engineering
KW  - Telecommunication
KW  - Systems engineering
KW  - Engineering
KW  - Circuits and Systems
KW  - Communications Engineering, Networks
KW  - Semiconductors
N1  - Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope
N2  - This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  ·         Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; ·         Explains the design of RF switches using the technologies presented and simulates switches; ·         Verifies parameters and discusses feasibility of devices and switches
UR  - http://dx.doi.org/10.1007/978-3-319-01165-3
ER  -