TY  - BOOK
AU  - Hwang,Choel Seong
ED  - SpringerLink (Online service)
TI  - Atomic Layer Deposition for Semiconductors
SN  - 9781461480549
AV  - QD551-578 
U1  - 541.37 23
PY  - 2014///
CY  - Boston, MA
PB  - Springer US, Imprint: Springer
KW  - chemistry
KW  - Memory management (Computer science)
KW  - electronics
KW  - Electric engineering
KW  - Chemistry
KW  - Electrochemistry
KW  - Semiconductors
KW  - Memory Structures
KW  - Energy Technology
KW  - Electronics and Microelectronics, Instrumentation
N1  - Introduction -- Precursors and reaction mechanisms -- ALD simulations -- ALD for mass-production memories (DRAM and Flash) -- ALD for emerging memories -- PcRAM -- FeRAM -- Front end of the line process -- Back end of the line -- ALD machines
N2  - Atomic Layer Deposition (ALD) was originally designed for depositing uniform passivation layers over a very large area  for display devices in the late 1970s. Only recently, in the 21st century, has the this technique become popular for high integrated semiconductor memory devices. This book discusses ALD for all modern semiconductor devices, the basic chemistry of ALD, and models of ALD processes. The book also details ALD for both mass produced memories and emerging memories. Each chapter of the book provides history, operating principles, and a full explanation of ALD processes for each device
UR  - http://dx.doi.org/10.1007/978-1-4614-8054-9
ER  -