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Zinc oxide films obtained by sol-gel method from film-forming solutions S. A. Kuznetsova, E. Mongush, K. Lisitsa

By: Kuznetsova, Svetlana AContributor(s): Mongush, E | Lisitsa, Konstantin VMaterial type: ArticleArticleSubject(s): золь-гель метод | пленкообразующие растворы | пленки оксида цинкаGenre/Form: статьи в журналах Online resources: Click here to access online In: Journal of Physics: Conference Series Vol. 1145. P. 012020 (1-8)Abstract: Thin ZnO films on silicon and quartz substrates were obtained from a film-enriched ethanolic solution based on Zn(NO3)2⋅6H2O and salicylic acid. The effect of salicylic acid on the processes occurring in the film-forming solution was studied by IR spectroscopy, proton-magnetic resonance, and viscometry methods. The formation of zinc salicylate nitrate in an ethanol solution is established, where salicylic acid exhibits a monodentate property in the carboxyl group. Thermal formation of zinc oxide was determined by thermal analysis and X-ray diffraction. The analysis of optical and electrophysical characteristics of ZnO films was carried out using spectroscopy, ellipsometry and also a block for measuring the electrophysical properties of thin-film materials. It was found that ZnO films were semiconductors of the electronic type, characterized by an optical band gap of 2.91–3.21eV, a surface resistance of 109–106 Q. and transparency coefficients in the visible spectral range of 0.80–0.96. It was shown that as the thickness of the ZnO films increased the resistance decreased.
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Thin ZnO films on silicon and quartz substrates were obtained from a film-enriched ethanolic solution based on Zn(NO3)2⋅6H2O and salicylic acid. The effect of salicylic acid on the processes occurring in the film-forming solution was studied by IR spectroscopy, proton-magnetic resonance, and viscometry methods. The formation of zinc salicylate nitrate in an ethanol solution is established, where salicylic acid exhibits a monodentate property in the carboxyl group. Thermal formation of zinc oxide was determined by thermal analysis and X-ray diffraction. The analysis of optical and electrophysical characteristics of ZnO films was carried out using spectroscopy, ellipsometry and also a block for measuring the electrophysical properties of thin-film materials. It was found that ZnO films were semiconductors of the electronic type, characterized by an optical band gap of 2.91–3.21eV, a surface resistance of 109–106 Q. and transparency coefficients in the visible spectral range of 0.80–0.96. It was shown that as the thickness of the ZnO films increased the resistance decreased.

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