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GaN-Based Laser Diodes electronic resource Towards Longer Wavelengths and Short Pulses / by Wolfgang G. Scheibenzuber.

By: Scheibenzuber, Wolfgang G [author.]Contributor(s): SpringerLink (Online service)Material type: TextTextSeries: Springer ThesesPublication details: Berlin, Heidelberg : Springer Berlin Heidelberg, 2012Description: XIV, 98 p. online resourceContent type: text Media type: computer Carrier type: online resourceISBN: 9783642245381Subject(s): physics | Physics | Laser Technology, Photonics | Semiconductors | Optics, Optoelectronics, Plasmonics and Optical DevicesDDC classification: 621.36 LOC classification: TA1671-1707TA1501-1820Online resources: Click here to access online
Contents:
Basic Concepts -- Thermal Properties -- Light Propagation and Amplification in Laser Diodes from Violet to Green -- Semipolar Crystal Orientations for Green Laser Diodes -- Dynamics of Charge Carriers and Photons -- Short-Pulse Laser Diodes.
In: Springer eBooksSummary: The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.
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Basic Concepts -- Thermal Properties -- Light Propagation and Amplification in Laser Diodes from Violet to Green -- Semipolar Crystal Orientations for Green Laser Diodes -- Dynamics of Charge Carriers and Photons -- Short-Pulse Laser Diodes.

The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.

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